Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena

HL 43.21: Poster

Tuesday, March 27, 2012, 09:30–12:30, Poster D

High Temperature Induced Traps in Tungsten/GaN Schottky Diodes — •Michael Pleul, Markus Arnold, Daniel Lehmann, and Dietrich R. T. Zahn — Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany

The properties of metal/semiconductor interfaces like in Schottky diodes are highly dependent on traps near the interface created by the diffusion of metal into the semiconductor. The investigation comprises in situ I-V (current-voltage) and C-V (capacitance-voltage) measurements of Tungsten/GaN Schottky diodes at different annealing temperatures up to 700 ^∘C. In addition DLTS (Deep Level Transient Spectroscopy) measurements are performed to reveal the annealing dependent trap concentration.