Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena

HL 43.3: Poster

Tuesday, March 27, 2012, 09:30–12:30, Poster D

Growth of GaAs nanowires on GaAs (111)B substrates induced by focused ion beam — •Rüdiger Schott, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Semiconductor nanowires are a promising system for applications in the areas of electronics and photonics as well as for exploring phenomena at the nanoscale. There are several approaches to grow nanowires at predetermined sites on the wafer. We report about growing GaAs-nanowires on GaAs (111)B substrates via the vaporliquid-solid (VLS) mechanism in an ultra-high-vacuum (UHV)-cluster consisting of a molecular beam epitaxy (MBE) and a focused ion beam (FIB) system. Our idea is to implant metal seeds for the nanowire growth using FIB. Due to the UHV transfer between the FIB and the MBE chamber, no further cleaning step of the substrate surface is necessary. We were able to grow single nanowires in user defined patterns on the wafer. Nanowire diameters below than 20nm were observed. The structural and optical properties of the nanowires were investigated by SEM, TEM and photoluminescence spectroscopy.