Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena
HL 43.6: Poster
Tuesday, March 27, 2012, 09:30–12:30, Poster D
Correlating the Crystal Structure and Quantum Transport of Individual InAs Nanowires — •Martin Schuck1,2, Christian Blömers1,2, Robert Frielinghaus2,3, Torsten Rieger1,2, Stefan Trellenkamp2,4, Carola Meyer2,3, Mihail Ion Lepsa1,2, Detlev Grützmacher1,2, and Thomas Schäpers1,2,5 — 1Peter Grünberg Institut -9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA - Fundamentals of Future Information Technology — 3Peter Grünberg Institut -6, Forschungszentrum Jülich, 52425 Jülich, Germany — 4Peter Grünberg Institut -8, Forschungszentrum Jülich, 52425 Jülich, Germany — 5II. Physikalisches Institut, RWTH Aachen, 52074 Aachen, Germany
InAs nanowires often exhibit crystal phase mixing between zinc blende and wurtzite structure resulting in a high density of stacking faults and undulations of the band gap. Up to now, their influence on the quantum transport properties is not clear. To unravel possible correlations, a detailed investigation of the crystal structure combined with transport measurements of the same individual nanowire is required. Here we present a process technology suitable to address this problem. First windows are etched into Si3 N4 transmission electron microscopy (TEM ) membranes. Then InAs nanowires, grown by molecular beam epitaxy (MBE), are dispersed on the membranes. Some InAs nanowires will span across a window and will be contacted via standard electron beam lithography to perform transport measurements. Consequently, this setup fulfills the requirements and transport measurements as well as TEM are performed on an individual nanowire.