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HL: Fachverband Halbleiterphysik

HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena

HL 43.8: Poster

Dienstag, 27. März 2012, 09:30–12:30, Poster D

Alloy formation during InAs nanowire growth on GaAs(111) — •Anton Davydok¹, Torsten Rieger^2,3, Muhammad Saqib¹, Andreas Biermanns¹, Thomas Grap^2,3, Mihail Lepsa^2,3, and Ullrich Pietsch¹ — ¹Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3,57072, Siegen, Germany — ²Peter Grünberg Institut-9, Forschungszentrum Jülich, Germany — ³JARA-Fundamentals of Future Information Technology

The growth of semiconductor nanowires has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. A possible way to obtain nanowires is the growth in molecular beam epitaxy on the (111)B oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of InAs nanowires grown on GaAs substrates covered by different oxide-layers using x-ray diffraction. In this contribution, we report on the structural investigation of InAs nanowires grown via an In droplet on GaAs substrates covered by different oxide layers using x-ray diffraction.Using a combination of symmetric and asymmetric x-ray diffraction, we observe that for growth on a defective oxide layer, alloy formation takes place and a large amount of InGaAs is formed, whereas for growth on an initially smooth oxide layer, only pure InAs is formed.