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HL: Fachverband Halbleiterphysik

HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena

HL 43.9: Poster

Dienstag, 27. März 2012, 09:30–12:30, Poster D

Optical studies of InAs Quantum Dots on GaAs doped with rare earth ions by ion beam implantation — •Markus K. Greff, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Single spins in semiconductors could offer the possibility to integrate information storage and processing in a single material basis and the development of quantum information processing based on solid state systems. We dope InAs Quantum Dots (QD) with Eu that possesses a nearly half filled, strongly localised f-shell in GaAs. This, in combination with the strong carrier confinement in the QDs, could lead to a stronger magnetic coupling between the magnetic ion and the confined carriers. The QDs and the surrounding GaAs matrix have been doped with Eu at 30 keV by ion beam implantation and subsequently annealed by rapid thermal annealing using proximity capping to avoid surface degradation from arsenic loss.

In this contribution we would like to present results of first photoluminescence measurements at 77 K which show that, due to the interaction of the QDs and the Eu ion, a new distinct peak, which origin is not yet fully understood, appears in the PL spectrum.