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09:30 |
HL 43.1 |
Lattice parameters and strain-accommodation in mixed zinc-blende/ wurtzite GaAs nanowires on Si — •Ullrich Pietsch, Andreas Biermanns, Steffen Breuer, Anton Davydok, Achim Trampert, and Lutz Geelhaar
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09:30 |
HL 43.2 |
Investigation of single GaAs nanowires through grazing incidence X-ray diffraction — •Genziana Bussone, Rüdiger Schott, Anton Davydok, Andreas Biermanns, Dirk Reuter, Andreas D. Wieck, and Ullrich Pietsch
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09:30 |
HL 43.3 |
Growth of GaAs nanowires on GaAs (111)B substrates induced by focused ion beam — •Rüdiger Schott, Dirk Reuter, and Andreas D. Wieck
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09:30 |
HL 43.4 |
Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs — •Andreas Biermanns, Torsten Rieger, Anton Davydok, Mihail Ion Lepsa, and Ullrich Pietsch
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09:30 |
HL 43.5 |
Vapor-solid growth of InAs nanowires on GaAs substrates by MBE — •Torsten Rieger, Mihail Ion Lepsa, Thomas Schäpers, and Detlev Grützmacher
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09:30 |
HL 43.6 |
Correlating the Crystal Structure and Quantum Transport of Individual InAs Nanowires — •Martin Schuck, Christian Blömers, Robert Frielinghaus, Torsten Rieger, Stefan Trellenkamp, Carola Meyer, Mihail Ion Lepsa, Detlev Grützmacher, and Thomas Schäpers
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09:30 |
HL 43.7 |
Elemental and Structural Analysis of Nanowires in Cross-Sectional Specimens — •Benedikt Bauer, Johannes Bill, Marcello Soda, Andreas Rudolph, Elisabeth Reiger, and Josef Zweck
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09:30 |
HL 43.8 |
Alloy formation during InAs nanowire growth on GaAs(111) — •Anton Davydok, Torsten Rieger, Muhammad Saqib, Andreas Biermanns, Thomas Grap, Mihail Lepsa, and Ullrich Pietsch
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09:30 |
HL 43.9 |
Optical studies of InAs Quantum Dots on GaAs doped with rare earth ions by ion beam implantation — •Markus K. Greff, Dirk Reuter, and Andreas D. Wieck
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09:30 |
HL 43.10 |
Capacitance-Voltage spectroscopy of InAs quantum dots under external applied strain — •Sascha René Valentin, Arne Ludwig, Dirk Reuter, and Andreas D. Wieck
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09:30 |
HL 43.11 |
Structural characterization of InAs and In0.25Ga0.75As/GaAs nanostructures grown on GaP(001) — •Christopher Prohl, Yannick Rodriguez Sillke, Andrea Lenz, Josephine Schuppang, Murat Öztürk, Gernot Stracke, André Strittmatter, Dieter Bimberg, Holger Eisele, and Mario Dähne
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09:30 |
HL 43.12 |
3D-Determination of InGaAs Quantum Dots in Cross-Section TEM Specimens — •Maren Schiersch, Tore Niermann, André Strittmatter, Tim David Germann, Gernot Stracke, Jan-Hindrik Schulze, Udo W. Pohl, and Michael Lehmann
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09:30 |
HL 43.13 |
TEM-Investigation of strain fields in In(Ga)As quantum dots — •Moritz Hartwig, Tore Niermann, André Strittmatter, Tim David Germann, Gernot Stracke, Jan-Hindrik Schulze, Udo W. Pohl, and Michael Lehmann
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09:30 |
HL 43.14 |
Characterization of tensile-strained GaAs/GaSb nanostructures — •Jan Große, Andrea Lenz, Josephine Schuppang, Holger Eisele, Marie Duhamel, Alban Gassenq, Thierry Talierco, Eric Tournie, and Mario Dähne
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09:30 |
HL 43.15 |
Measurement of electrostatic potential at group III-N semiconductors using electron holography — •Jae Bum Park, Tore Niermann, and Michael Lehmann
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09:30 |
HL 43.16 |
Low density 1.55 µm Indium phosphide based quantum dots — •Matusala Yacob, Mohamed Benyoucef, and Johann Peter Reithmaier
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09:30 |
HL 43.17 |
Electrical Contacting of Pyramidal Microcavities for Single- Photon Applications — •Daniel Rülke, Daniel M. Schaadt, Heinz Kalt, and Michael Hetterich
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09:30 |
HL 43.18 |
All-oxide junction field-effect transistors — •Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, and Marius Grundmann
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09:30 |
HL 43.19 |
Passivation of ZnO-based MESFETs — •Fabian J. Klüpfel, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
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09:30 |
HL 43.20 |
(contribution withdrawn) High Temperature Characteristics of Tungsten/Silicon Schottky Diodes — •Markus Arnold, Michael Pleul, Daniel Lehmann, and Dietrich R. T. Zahn
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09:30 |
HL 43.21 |
High Temperature Induced Traps in Tungsten/GaN Schottky Diodes — •Michael Pleul, Markus Arnold, Daniel Lehmann, and Dietrich R. T. Zahn
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09:30 |
HL 43.22 |
Low-threshold polymeric microgoblet lasers — •Tobias Grossmann, Torsten Beck, Klinkhammer Sönke, Christoph Vannahme, Uli Lemmer, Timo Mappes, and Heinz Kalt
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09:30 |
HL 43.23 |
Development of monolithic dual frequency quantum dots based semiconductor laser suitable for tunable continuous wave terahertz generation — •Vitalii Sichkovskyi, Kamen Kozhuharov, and Johann Peter Reithmaier
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09:30 |
HL 43.24 |
Intersubband dynamics in two-photon quantum well infrared photodetectors — •Carsten Franke, Harald Schneider, Jérôme Faist, and H. C. Liu
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09:30 |
HL 43.25 |
From bistability to break-down of normal-mode splitting in microcavity systems — •Regina Kruse, Stefan Declair, Jens Förstner, and Stefan Schumacher
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09:30 |
HL 43.26 |
Optical excitation conditions for generating squeezed phonon states in a quantum dot — •Daniel Wigger, Doris E. Reiter, Vollrath Martin Axt, and Tilmann Kuhn
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09:30 |
HL 43.27 |
Optical excitation of squeezed LO phonons in a quantum well — •Thomas Papenkort, Vollrath Martin Axt, and Tilmann Kuhn
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09:30 |
HL 43.28 |
Laser-induced nonthermal melting in Si — •Tobias Zier, Eeuwe S. Zijlstra, and Martin E. Garcia
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