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HL: Fachverband Halbleiterphysik
HL 44: Poster Session: Quantum Dots and Wires - Transport & Optical Properties
HL 44.10: Poster
Dienstag, 27. März 2012, 09:30–12:30, Poster D
Numerical analysis of few-electron transport in multi-gate nanowire field-effect transistors — •Jose Maria Castelo1, Klaus Michael Indlekofer1, and Joerg Malindretos2 — 1RheinMain University of Applied Sciences, FB ING / IMtech, D-65428 Rüsselsheim, Germany — 2Georg-August-Universität Göttingen, IV. Physikalisches Institut, D-37077 Göttingen, Germany
We consider a nanowire-based field-effect transistor (NWFET) with a coaxial gate geometry, which provides ideal electrostatic control and gives rise to a screened Coulomb interaction. For the theoretical description of one-dimensional (1D) non-equilibrium transport, we employ a Green’s function formalism (NEGF). Few-electron Coulomb charging effects due to resonantly trapped electrons are taken into account by use of a multi-configurational approach (MCSCG) [1] for application-relevant temperatures. The electrostatics within the channel are described by a Coulomb Green’s function. These concepts provide the framework for the open source simulation tool "NWFET-Lab" [2] which is used in the following numerical studies.
Specifically, we consider a multi-gate NWFET. Using multiple bias and control gate electrodes, the channel’s axial potential profile can be defined, being equivalent to a position dependent doping. Employing a 1D FET model, we analyze the influence of the position and length of the control gate segment on the electronic transport characteristics.
[1] K.M. Indlekofer et al., Phys. Rev. B 72, 125308 (2005).
[2] J.M. Castelo and K.M. Indlekofer, http://sourceforge.net/ projects/nwfetlab (2011).