Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 45: Photovoltaics: Silicon-based Systems I
HL 45.3: Vortrag
Mittwoch, 28. März 2012, 10:00–10:15, ER 270
Formation of Black Silicon by differently polarized femtosecond laser pulses — •Stefan Kontermann1, Anna Lena Baumann1, Thomas Gimpel2, Kay Michael Guenther2, Augustinas Ruibys1, and Wolfgang Schade1,2 — 1Fraunhofer Heinrich Hertz Institute, EnergieCampus, Am Stollen 19, 38640 Goslar, Germany — 2Clausthal University of Technology, Institute of Energy Research and Physical Technologies and EFZN, EnergieCampus, Am Stollen 19A, 38640 Goslar, Germany
Irradiating a silicon surface with femtosecond laser pulses results in a low reflecting surface structure consisting of cone like features. Adding sulfur to the atmosphere, where the light material interaction takes place, yields an enhanced infrared absorption of this Black Silicon substrate. Due to the sub band gap absorption, Black Silicon allows a better exploitation of the light energy contained in the sun spectrum. Therefore Black Silicon is one of the materials that are about to enter the photovoltaic research and development stage. In earlier studies the influence of different parameters on the Black Silicon structure like laser pulse number per spot, laser fluence, pressure in the processing chamber, or the crystal orientation were investigated. In this work we present results from a study of the Black Silicon structures when laser pulses of different polarization are applied. We examine the correlation between surface properties and polarization and compare these results to the structure formed by linearly polarized fs-laser pulses using scanning electron microscopy and absorption measurements.