Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 46: Focus Session: AlGaN Materials for UV Emitters
HL 46.2: Topical Talk
Mittwoch, 28. März 2012, 10:00–10:30, ER 164
Towards Sub-300 nm AlGaN Laser Diodes on Bulk AlN Substrates — •Thomas Wunderer1, Christopher Chua1, John Northrup1, Zhihong Yang1, Noble Johnson1, Michael Kneissl1,4, Gregory Garrett2, Hongen Shen2, Michael Wraback2, Baxter Moody3, Spalding Craft3, Raoul Schlesser3, Rafael Dalmau3, and Zlatko Sitar3 — 1Palo Alto Research Center Inc., Palo Alto, CA, USA — 2US Army Research Laboratory, Adelphi, MD, USA — 3HexaTech Inc., Morrisville, NC, USA — 4Inst. of Solid State Physics, TU Berlin, Berlin, Germany
We report recent progress on the development towards sub-300 nm laser diodes. By using high-quality bulk AlN substrates we are able to achieve excellent crystalline quality of the epitaxially grown MOCVD laser hetero-structures. We successfully realized optically pumped AlGaN-based lasers in the wavelength regime between 237 and 291nm with threshold pump power densities below 130 kW/cm2. Results of structural and optical investigation methods will confirm the high material quality, which led to the high lasing performance. We will discuss the polarization properties of the lasers with different emission wavelengths and present concepts of how to address the electrical challenge of high bandgap laser diodes.