Berlin 2012 –
wissenschaftliches Programm
HL 46: Focus Session: AlGaN Materials for UV Emitters
Mittwoch, 28. März 2012, 09:30–12:45, ER 164
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09:30 |
HL 46.1 |
Hauptvortrag:
AlN-based technology for electronics and optoelectronics — •Zlatko Sitar, Ramon Collazo, Raoul Schlesser, Spalding Craft, Baxter Moody, Seiji Mita, Jinqiao Xie, Anthony Rice, and James Tweedy
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10:00 |
HL 46.2 |
Topical Talk:
Towards Sub-300 nm AlGaN Laser Diodes on Bulk AlN Substrates — •Thomas Wunderer, Christopher Chua, John Northrup, Zhihong Yang, Noble Johnson, Michael Kneissl, Gregory Garrett, Hongen Shen, Michael Wraback, Baxter Moody, Spalding Craft, Raoul Schlesser, Rafael Dalmau, and Zlatko Sitar
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10:30 |
HL 46.3 |
Topical Talk:
High-efficiency AlGaN-based light-emitting diodes for the UV-A wavelength range — •Richard Gutt, Thorsten Passow, Michael Kunzer, Wilfried Pletschen, Lutz Kirste, Kamran Forghani, Ferdinand Scholz, Klaus Köhler, and Joachim Wagner
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11:15 |
HL 46.4 |
Topical Talk:
Growth and properties of bulk AlN crystals — •Boris Epelbaum
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11:45 |
HL 46.5 |
Topical Talk:
Studies about defect reduction in AlGaN hetero structures — •Ferdinand Scholz, Kamran Forghani, Haoyuan Qi, Mohammadreza Gharavipour, Martin Klein, Oliver Klein, Ute Kaiser, Benjamin Neuschl, Klaus Thonke, Richard Gutt, and Thorsten Passow
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12:15 |
HL 46.6 |
Topical Talk:
Dielectric properties and band structure evolution in AlGaN alloys — •Christoph Cobet
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