Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: Focus Session: Spintronics (jointly with MA)

HL 48.1: Vortrag

Mittwoch, 28. März 2012, 10:00–10:15, EW 201

Electron spin decoherence in SiC nuclear spin bath — •Nan Zhao, Christian Burk, and Joerg Wrachtrup — 3. Physikalisches Institut, Universität Stuttgart, 70569 Stuttgart , Germany

The coherent control of electron spin of defect centers in SiC was reported very recently [1]. Here, we calculate the decoherence of defect center electron spin in SiC nuclear spin bath. In SiC, the nuclear spin bath consists of two types of spin-1/2 isotopes, Si-29 and C-13. The natural abundance of Si-29 is 4.7%, about four times larger than that of C-13. Intuitively, the spin decoherence in SiC nuclear spin bath would be faster than NV in diamond. However, our calculations demonstrate that, when nuclear spin bath dominates decoherence process, the averaged coherence time of electron spin in SiC will be comparable or even longer than that of NV in diamond. We show that the reason for this counter-intuitive result is the suppression of the hetero-nuclear spin flip-flop process in magnetic fields. Our research provides the possibility of further exploring the quantum coherent spin dynamics in SiC.

Reference:

[1] Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G., & Awschalom, D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature, 479, 84 (2011).