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09:30 |
HL 4.1 |
Study of site symmetry from Europium (Eu+3) luminescence in Europium-implanted p-GaN — •Jayanta Kumar Mishra, Torsten Langer, Uwe Rossow, Kirill Trunov, Andreas Wieck, and Andreas Hangleiter
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09:45 |
HL 4.2 |
Evidence for strain-induced defects as dominant nonradiative recombination centers in GaInN/GaN quantum wells — •Torsten Langer, Markus Göthlich, Andreas Kruse, Holger Jönen, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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10:00 |
HL 4.3 |
Angle resolved XPS for investigation of surface band-bending of III-nitrides — •Robert Metzner, Bernd Garke, Martin Feneberg, Stephanie Fritze, Armin Dadgar, Alois Krost, and Rüdiger Goldhahn
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10:15 |
HL 4.4 |
Optical Investigation of Mg-doped AlGaN layers — •Sarah Osterburg, Martin Feneberg, María Fátima Romero, Bernd Garke, Jianchang Yan, Jianping Zeng, Junxi Wang, and Rüdiger Goldhahn
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10:30 |
HL 4.5 |
Systematic optical characterization of InAlN/GaN heterostructures with different In content — •María Fátima Romero, Martin Feneberg, Rüdiger Goldhahn, Pascal Moser, Armin Dadgar, and Alois Krost
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10:45 |
HL 4.6 |
Optical studies on doped and nominally undoped AlN layers — •Benjamin Neuschl, Martin Feneberg, María Fátima Romero, Rüdiger Goldhahn, Zhihong Yang, Thomas Wunderer, Jinquiao Xie, Seiji Mita, Anthony Rice, Ramón Collazo, Zlatko Sitar, and Klaus Thonke
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11:00 |
HL 4.7 |
Raman spectroscopic characterization of freestanding GaN layers — •Christian Röder, Frank Lipski, Cameliu Himcinschi, Jens Kortus, and Ferdinand Scholz
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11:15 |
HL 4.8 |
Local changes in the growth of the active region on semipolar templates produced by ELO — •Clemens Waechter, Julian Mack, Ulrich Rengstl, Elisabeth Koroknay, Michael Jetter, and Peter Michler
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11:30 |
HL 4.9 |
Structural and optical quality of GaN films grown on Sc2O3/Y2O3/Si(111) — •Lidia Tarnawska, Peter Zaumseil, Peter Storck, and Thomas Schroeder
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