Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 50: III-V Semiconductors II (mainly Arsenides)
HL 50.3: Talk
Wednesday, March 28, 2012, 10:00–10:15, EW 203
Millisecond flash lamp annealed GaAs: a promising light emitter material at 1.3 μm — •Kun Gao1, Slawomir Prucnal1, Zenan Jiang1, Wolfgang Skorupa1, Manfred Helm1, Oksana Yastrubchak2, Lukasz Gluba2, and Shengqiang Zhou1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 510119, 01314 Dresden, Germany — 2Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin, Poland
Gallium arsenide based materials have outstanding performances in light-emitting devices and are being widely used in optical communication devices in virtue of their remarkable efficiency and thermal stability.
We present a novel method to achieve the 1.3 μm light emitting by defect-induced luminescent centers. Mn-implanted and N-implanted GaAs as well as un-doped GaAs wafers were treated by millisecond flash lamp annealing techniques. The optical properties of the samples were investigated. Results have shown the successful incorporation of Mn and N into GaAs lattice. For the intrinsic and the N-incorporated GaAs, a strong luminescence peak occurs at 1.3 μm. On the other hand, Mn-doping has suppressed this luminescence. It is still noticeable that the 1.3 μm light emitting only have a slight redshift (about 20 nm) and 58% intensity decline as the temperature rises from 20 K to room temperature. Our investigation suggests that after flash lamp annealing GaAs based materials exhibit a promising prospect on applications of light emitters and detectors for optical communication devices.