HL 50: III-V Semiconductors II (mainly Arsenides)
Mittwoch, 28. März 2012, 09:30–10:45, EW 203
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09:30 |
HL 50.1 |
Free-standing rolled-up metal oxide field-effect-transistor — •Daniel Grimm, Carlos C. B. Bufon, Dominic J. Thurmer, Christoph Deneke, Franziska Schäffel, Paola Atkinson, and Oliver G. Schmidt
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09:45 |
HL 50.2 |
Generation and detection of picosecond transverse phonon pulses in high-index GaAs — •Jasmin Jäger, Michael Bombeck, Alexey Salasyuk, Alexey Scherbakov, Andrey Akimov, Dmitri Yakovlev, and Manfred Bayer
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10:00 |
HL 50.3 |
Millisecond flash lamp annealed GaAs: a promising light emitter material at 1.3 μm — •Kun Gao, Slawomir Prucnal, Zenan Jiang, Wolfgang Skorupa, Manfred Helm, Oksana Yastrubchak, Lukasz Gluba, and Shengqiang Zhou
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10:15 |
HL 50.4 |
Zeeman splitting and diamagnetic shift of spatially confined quantum-well exciton polaritons in an external magnetic field — •Arash Rahimi-Iman, Christian Schneider, Julian Fischer, Steffen Holzinger, Matthias Amthor, Lukas Worschech, Alfred Forchel, Stephan Reitzenstein, Sven Höfling, and Martin Kamp
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10:30 |
HL 50.5 |
Detection of THz Signals with a GaAs Field Effect Transistor — •Sascha Preu, Sangwoo Kim, Peter G. Burke, Hong Lu, Mark S. Sherwin, and Arthur C. Gossard
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