Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Topological Insulators II (jointly with MA, DS, O, TT)

HL 51.1: Talk

Wednesday, March 28, 2012, 09:30–09:45, EB 301

Topologically-related properties in presence of disorder. First-principle study — •Stanislav Chadov — Max-Planck-Institut für Chemische Physik fester Stoffe, Dresden

The presence of disorder is often seen as a destructive mechanism which must be reduced by any means. In present study we attempt to make it constructive due to the robustness of the spin current in topological insulators with respect to the time-reversal symmetric perturbations. Based on the first-principle calculations involving the Coherent Potential Approximation (CPA), we inspect the disorder-affected transport properties of the random alloys between topologically non-trivial and trivial materials. The subsequent analysis encounters few interesting aspects: the way how to increase the Hall angle by using random disorder and an indication for the topological Anderson insulator. In addition CPA provides an alternative recipe to validate the non-trivial topological state of the material based on a purely bulk information.