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HL: Fachverband Halbleiterphysik

HL 51: Topological Insulators II (jointly with MA, DS, O, TT)

HL 51.8: Vortrag

Mittwoch, 28. März 2012, 11:30–11:45, EB 301

Influence of magnetic impurities on doping and scattering properties of topological surface states: Fe on Bi₂X₃ (X=Te, Se) — •Markus R. Scholz¹, J. Sánchez-Barriga¹, D. Marchenko¹, A. Varykhalov¹, E. Rienks¹, A. Volykhov², L. V. Yashina², and O. Rader¹ — ¹Helmholtz-Zentrum Berlin — ²Moscow State University

We study the effect of Fe impurities deposited on the surface of the topological insulators Bi₂Se₃ and Bi₂Te₃ by means of photoelectron spectroscopy. The topological surface state reveals surface electron doping when the Fe is deposited at room temperature and hole doping when deposited at low temperture (∼10 K). We show that in both cases the topological surface state remains intact and gapless. We analyze the line broadening for pure Bi₂X₃ (X=Se, Te) and after deposition of Fe. We observe that the constant broadening in the bulk band gap range increases by a factor of 2 upon deposition of Fe. Because we deposit the Fe without electron doping, this result is not due to a gain in warping as was recently suggested. We discuss the results based on different types of scattering mechanisms.