Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 52: Organic Electronics and Photovoltaics: Electronic Properties I (jointly with DS, CPP, O)

HL 52.7: Vortrag

Mittwoch, 28. März 2012, 11:00–11:15, H 2032

Depth Profiling of Organic Electronic Materials by Gas Cluster Ion Beam — •Andrey Lyapin — Physical Electronics GmbH, Fraunhoferstr. 4, D-85737, Ismaning, Germany

The development of new electronic devices incorporating organic materials, such as Organic Light Diodes (OLED) and Organic Photovoltaics (OPV) is rapidly increasing. To control quality, performance and lifetime of these devices, it is necessary to characterize the layered structures and the dopant distributions in the thin organic materials. Conventional surface analysis techniques such as XPS and ToF-SIMS, combined with mono-atomic ion beam sputtering, have been widely used for chemical depth profiling of inorganic thin films. However, this approach has not been successful for the depth profiling of organic materials due to the loss of chemical information during the sputtering process. Recent cluster ion beam developments utilizing C₆₀⁺ ions have also had limited success for the depth profiling of OLED and OPV structures due to similar modification of chemical and molecular information as a function of sputter depth. The use of surface-sensitive techniques will be discussed for chemical and molecular characterization of OLED and OPV materials in combination with newly developed Gas Cluster Ion Beam (GCIB) source to achieve non-destructive chemical/molecular characterization beyond the surface and through the device. The GCIB source with an average of 2500 Ar atoms per single charged ion has shown dramatic results that both simplify and improve upon the analysis of OLED and OPV materials with a C₆₀⁺ cluster ion beam.