Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 55: Photovoltaics: Silicon-based Systems II
HL 55.4: Talk
Wednesday, March 28, 2012, 12:00–12:15, ER 270
Photovoltaic potential of femtosecond laser hyperdoped silicon — •Augustinas Ruibys1, Kay-Michael Günther2, Stefan Kontermann1, and Wolfgang Schade1,2 — 1Fraunhofer Heinrich Hertz Institute, EnergieCampus, Am Stollen 19B, 38640 Goslar — 2Clausthal University of Technology, EFZN, EnergieCampus, Am Stollen 19B, 38640 Goslar
Hyperdoping silicon with a femtosecond laser in a sulfur rich environment extends its absorption capacity far into the infrared. It is believed that high concentrations of sulfur create sub-bands rather than recombination centers within silicon. We present first deep-level transient spectroscopy (DLTS) measurement results that display the existence of a sub-band gap energy structure, although energy level degeneration could not yet be concluded. We then calculate the detailed balance limit of conversion efficiency for the hyperdoped silicon with an arbitrary positioned sub-band. Strategies to exploit the photovoltaic potential of this new material are discussed.