Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 6: Ge/Si I

HL 6.1: Vortrag

Montag, 26. März 2012, 09:30–09:45, EW 203

Heterostructure growth study for GaP collector integration in SiGe HBT technology — •Oliver Skibitzki¹, Fariba Hatami², Yuji Yamamoto¹, Peter Zaumseil¹, M. Andreas Schubert¹, Bernd Tillack^1,3, W. Ted Masselink², and Thomas Schroeder¹ — ¹IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — ²Humboldt Universität zu Berlin, MNF1, Newtonstrasse 15, 12489 Berlin, Germany — ³Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany

A heterostructure growth study of GaP on pseudomorphic 4^∘ off-oriented Si_0.8Ge_0.2/Si(001) substrates was performed to develop a III/V wide band gap collector concept for future SiGe heterobipolar transistor performance increase. Before pseudomorphic GaP/Si_0.8Ge_0.2/Si(001)) heterostructure growth, critical thickness of GaP on Si and maximum thermal budget for GaP deposition were evaluated by preliminary investigations. Using XRD, AFM and TEM for structure and defect characterization, we were able to report single crystalline 170 nm GaP growth on 20 nm Si_0.8Ge _0.2/Si(001) substrates. Results show that 20 nm Si_0.8Ge _0.2/Si(001) can be overgrown by 170 nm GaP without affecting the pseudomorphism of the Si_0.8Ge_0.2/Si(001) layer. However, due to defect nucleation at the GaP/ Si_0.8Ge_0.2 interface during initial island coalescence, the GaP layer grows partially relaxed. The achievement of 2D GaP growth conditions on Si_0.8Ge_0.2/Si(001) systems is thus a crucial step for achieving fully pseudomorphic heterostructures. APD-free GaP growth is observed for film thicknesses beyond 70 nm.