Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 6: Ge/Si I

HL 6.7: Talk

Monday, March 26, 2012, 11:00–11:15, EW 203

Cobalt-related defects in silicon: A deep level transient spectroscopy study — •Leopold Scheffler, Vladimir Kolkovsky, and Jörg Weber — Technische Universität Dresden, 01069 Dresden, Deutschland

In the present work cobalt-doped p- and n-type silicon samples were studied by means of deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS). We demonstrate that two dominant DLTS peaks previously assigned to an interstitial Co defect show different annealing behaviour and seem to belong to different defects. After wet chemical etching three other peaks (E90, E140 and H170) were observed in the samples. The intensity of the peaks becomes larger in the H-plasma treated samples. This together with depth profiling demonstrate that the peaks are hydrogen-related defects. The origin of the peaks will be discussed.