Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 60: Graphene: Raman Spectroscopy

HL 60.3: Talk

Wednesday, March 28, 2012, 16:00–16:15, ER 164

Resonant Raman scattering profiles and micro-photoluminescence of single- and bilayer molybdenum disulfide — •Nils Scheuschner¹, Oliver Ochedowski², Marika Schleberger², and Janina Maultzsch¹ — ¹Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin — ²Universität Duisburg-Essen, Fachbereich Physik, Lotharstrasse 1-21, 47057 Duisburg

Due to their intrinsic band gap of approximately 1.9 eV and the lack of dangling bonds, atomically thin layers of molybdenum disulfide appear to be a good complement to graphene. For instance molybdenum disulfide could be used in graphene/molybdenum disulfide heterostructures for energy harvesting to create novel extremely thin photovoltaic devices. For this purpose it is a key requirement to understand the electronic structure and possible excitonic effects of single- and bilayer molybdenum disulfide. We present Raman resonance profiles of first-order Raman modes in the energy range of the first optical transition. Furthermore we present micro-photoluminescence of molybdenum disulfide samples covering a wide range of layer numbers. We will discuss the influence of different substrates on the properties of molybdenum disulfide.