HL 61: GaN: Preparation and Characterization II (mainly structural)
Mittwoch, 28. März 2012, 15:00–16:15, EW 202
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15:00 |
HL 61.1 |
Effect of the growth conditions on the early stages of pyramidal semipolar template growth — •Jan Wagner, Clemens Waechter, Julian Mack, Michael Jetter, and Peter Michler
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15:15 |
HL 61.2 |
Epitaxy and characterization of Al1−xInxN grown by low pressure MOVPE on various substrates — •Ernst Ronald Buss, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
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15:30 |
HL 61.3 |
InGaN(0001) surface reconstructions — •C. Friedrich, A. Biermann, N. Esser, M. Kneissl, and P. Vogt
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15:45 |
HL 61.4 |
Determination of piezoelectric fields in GaN/InGaN/GaN quantum wells by DPC — •Josef Zweck, Matthias Lohr, Michael Jetter, Clemens Wächter, Thomas Wunderer, and Ferdinand Scholz
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16:00 |
HL 61.5 |
Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures — •Mathias Müller, Anja Dempewolf, Frank Bertram, Thomas Hempel, Antje Rohrbeck, Jürgen Christen, Alois Krost, Wang Lai, Wang Jiaxing, Wang Lei, and Luo Yi
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