Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 62: Quantum Dots and Wires: Transport Properties I (mainly Quantum Wires)
HL 62.3: Talk
Wednesday, March 28, 2012, 15:30–15:45, EW 203
Structural influences on quantum transport in InAs nanowires — •Robert Frielinghaus1,4, Kilian Flöhr2,4, Kamil Sladek1,4, Stefan Trellenkamp1,4, Thomas E. Weirich3,4, Hilde Hardtdegen1,4, Thomas Schäpers1,2,4, Claus M. Schneider1,4, and Carola Meyer1,4 — 1Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany — 2II. Physikalisches Institut, RWTH Aachen University, 52074 Aachen, Germany — 3Central Facility for Electron Microscopy GFE, RWTH Aachen University, 52074 Aachen, Germany — 4JARA Fundamentals of Future Information Technology
Self-assembled nanostructures such as InAs nanowires are candidates for future semiconductor nanoscale devices. However their atomic arrangement usually differs from device to device leading to fluctuations in the electrical properties as e.g. the electron phase coherence length. Using a special sample design we present quantum transport measurements together with transmission electron micrographs (TEM) taken from the same individual InAs nanowires. The as-grown nanowires are selectively placed on holes patterned in a TEM membrane. Low-temperature magnetotransport measurements of these suspended nanowires reveal universal conductance fluctuations that allow for the determination of the phase coherence length without any influence of the substrate. Variations in the transport behavior are correlated to the atomically resolved structure observed in TEM.