Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 62: Quantum Dots and Wires: Transport Properties I (mainly Quantum Wires)
HL 62.6: Talk
Wednesday, March 28, 2012, 16:15–16:30, EW 203
Hall Measurements on InAs Nanowires — •Christian Blömers1,3, Thomas Grap1,3, Stefan Trellenkamp2,3, Mihail I. Lepsa1,3, Detlev Grützmacher1,3, Hans Lüth1,3 und Thomas Schäpers1,3,4 — 1Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — 2Peter Grünberg Institut (PGI-8), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — 3JARA - Fundamentals of Future Information Technology — 4II. Physikalisches Institut, RWTH Aachen, 52074 Aachen, Germany
In search of novel concepts for the realization of nanoelectronic devices, semiconductor nanowires grown by “bottom-up” techniques have shown great promise. Without any doubt, the knowledge about the free carrier concentration nel is crucial for the fabrication of such devices on the nanometer scale. The most common method to determine nel in nanowires is to utilize the field effect in a gate measurement setup. However, within this method, uncertainties such as the density of surface states between the nanowire and the dielectric material or the resulting nanowire capacitance influence results. Additionally, source and drain electrodes tend to screen the gate potential in devices of small size. Here we report on Hall measurements on InAs nanowires as an alternative method to determine nel. By electron beam lithography we are able to fabricate side contacts to single nanowires to realize a Hall-measurement geometry. The side contacts allow us to measure a Hall-voltage, from which we deduce the carrier concentration in the wires.