Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 63: Devices I
HL 63.3: Talk
Wednesday, March 28, 2012, 15:30–15:45, EW 015
Solution-processed p-channel tin monoxide thin-film transistors — •Koshi Okamura1, Babak Nasr1,2, Richard A. Brand1, and Horst Hahn1,2 — 1Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe, Germany — 2Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt and KIT, Petersenstr. 32, 64287 Darmstadt, Germany
Oxide semiconductor thin-film transistors (TFTs) have been fabricated both in the conventional vacuum processes and in the solution-processes intensively for n-channel type zinc oxide (ZnO) and amorphous oxide semiconductors. The material search for the p-channel type is, however, still challenging. Tin monoxide (SnO) is so far the most promising p-type oxide semiconductor that has been demonstrated for epitaxially grown and sputtered TFTs. In this study, p-channel enhancement mode SnO TFTs are fabricated in a solution-process by spin-coating a methanol solution of the precursor tin(II) chloride dihydrate (SnCl2.2H2O), followed by an exposure to ammonium hydroxide and a postannealing in purified forming gas at a temperature of 450-500 ∘C. Systematic investigations reveal that the transistor performance is strongly dependent on the crystallinity and thin-film morphology, showing a highest field-effect mobility of 0.13 cm2 V−1 s−1, threshold voltage of -1.9 V, and on/off drain current ratio of 85.