Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 63: Devices I

HL 63.4: Talk

Wednesday, March 28, 2012, 15:45–16:00, EW 015

Chemical surface modifications for altering electrical characteristics of silicon nanowire Schottky-barrier FETs — •Sebastian Pregl^1,2, Walter Weber², Joerg Opitz³, and Gianaurelio Cuniberti¹ — ¹Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany — ²NaMLab GmbH, 01187 Dresden, Germany — ³Fraunhofer Institute IZFP Dresden, 01109 Dresden, Germany

The interface of semiconductors to metals with a different work function introduces a Schottky barrier. For axially Ni-silicidized silicon nanowires a very sharp interface and thus a very defined and reproducible energetical barrier is created. We use NiSi₂-Si-NiSi₂ heterostructures as Schottky-barrier field effect transistors (SB-FETs) for sensor applications and nanoelectronic devices. Silicon nanowires can be grown as thin as 5nm with VLS (vapor liquid solid) technique in a CVD furnace. The high surface to volume ratio of such nanostructures makes their electronic properties very sensitive to surface adsorbates and covalently bound molecules. The effect of surface functionalization is investigated in respect of a potential use for biosensor applications and new ways to alter device characteristics of silicon nanowire FETs.