Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 64: GaN: Preparation and Characterization III

HL 64.2: Talk

Wednesday, March 28, 2012, 16:45–17:00, EW 202

Impact of silane on heteroepitaxial growth and properties of a-plane GaN — •Matthias Wieneke, Thomas Hempel, Hartmut Witte, Antje Rohrbeck, Peter Veit, Jürgen Bläsing, Armin Dadgar, Jürgen Christen, and Alois Krost — Otto-von-Guericke-Universität Magdeburg, FNW/IEP, Universitätsplatz 2, 39106 Magdeburg

Silane is a well-established Si precursor to achieve n-type doped GaN layers. In the case of a-plane GaN layers we have demonstrated earlier a significant reduction of basal plane stacking faults to less than 10⁴ cm⁻¹ by using a silane flow rate to get a nominal Si doping level in the range of 10²⁰ cm⁻³ [1]. By varying the silane flow rate as well as other growth parameters, e. g., growth temperature, V/III ratio, reactor pressure, their influences on the morphological and micro structural properties of Si doped a-plane GaN were investigated. Furthermore, we also found an evident dependency on the buffer layer thickness. Here heavily Si doped GaN grown on an about 1.5 µm thick coalesced GaN buffer layer exhibits no defect reduction. Based on these results some possible causes of the successful BSF reduction, e.g., selective etching or SiN nanomasking, will be discussed. [1] Wieneke et al., Physica Status Solidi B 248, 578 (2011)