Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 66: Transport Properties III (Experiments)

HL 66.4: Vortrag

Mittwoch, 28. März 2012, 19:00–19:15, ER 164

GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing — •Fabian Hartmann, Fabian Langer, Dirk Bisping, Sven Höfling, Martin Kamp, Alfred Forchel, and Lukas Worschech — Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany

GaAs based double AlGaAs barrier resonant tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched GaInNAs absorption layer. The electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs buffer layer incorporated between the AlGaAs barrier and the GaInNAs absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated with diameters from 12 down to 1 micrometer. A resonant current peak was observed for all samples at room temperature with a maximum peak-to-valley ratio of 3.9. Under illumination with laser light of 1300 nm wavelength, a pronounced photo-effect is found with sensitivities of about 1000 A/W.