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HL: Fachverband Halbleiterphysik

HL 66: Transport Properties III (Experiments)

HL 66.5: Vortrag

Mittwoch, 28. März 2012, 19:15–19:30, ER 164

Bistable swichting in double electron layer Y branch switches — •Stefan Kremling, Sven Höfling, Lukas Worschech, Martin Kamp, and Alfred Forchel — Technische Physik, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, Bavaria, D-97074 Würzburg, Germany

Nanoelectronics with III-V compound semiconductors have attracted considerable attention due to their outstanding electron transport properties. Y-branch switches (YBSs) which consist of a drain split along a branching section into two branches have been proposed as efficient switching devices. Recently, selfgating of YBSs has been observed in the nonlinear regime at bias voltages of a few Volts, where one branch serves as gate to control the conductance of the other branch. In order to enhance the selfgating for small bias voltages, the couplings between the branches have to be maximized, e.g. by closely spaced electron layers. By means of electron beam lithography, YBSs were defined in double electron layers based on GaAs quantum wells embedded in AlGaAs barriers. The transfer characteristics of the YBSs were tested and maximum transconductances values of e/kT were observed at the transition to bistable switching. A model for a dynamic gate operation is proposed and compared with the measurements.