HL 66: Transport Properties III (Experiments)
Mittwoch, 28. März 2012, 18:15–19:30, ER 164
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18:15 |
HL 66.1 |
Picosecond time-resolved photocurrents in GaAs nanowires — •Nadine Erhard, Leonhard Prechtel, Milan Padilla, Helmut Karl, Gerhard Abstreiter, Anna Fontcuberta, and Alexander Holleitner
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18:30 |
HL 66.2 |
Transporteigenschaften von (BGa)((As)P)-Kontaktschichten für monolithisch integrierte Ga(NAsP)-Laser auf Si-(001)-Substraten — •Christian Lück, Martin Zimprich, Sven Liebich, Andreas Arndt, Andreas Beyer, Bernardette Kunert, Kerstin Volz und Wolfgang Stolz
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18:45 |
HL 66.3 |
Ballistic and thermoelectric contributions to transverse rectification in density-modulated 2D-systems — •Arkadius Ganczarczyk, Andy Quindeau, Martin Geller, Axel Lorke, Dirk Reuter, and Andreas D. Wieck
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19:00 |
HL 66.4 |
GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing — •Fabian Hartmann, Fabian Langer, Dirk Bisping, Sven Höfling, Martin Kamp, Alfred Forchel, and Lukas Worschech
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19:15 |
HL 66.5 |
Bistable swichting in double electron layer Y branch switches — •Stefan Kremling, Sven Höfling, Lukas Worschech, Martin Kamp, and Alfred Forchel
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