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HL: Fachverband Halbleiterphysik

HL 69: Quantum Dots and Wires: Transport Properties II (mainly Quantum Dots)

HL 69.5: Vortrag

Mittwoch, 28. März 2012, 18:15–18:30, EW 203

Deep-Level Transient Spectroscopy on GaSb/GaAs and In_0.25Ga_0.75As/GaP quantum dots — •Leo Bonato¹, Tobias Nowozin¹, Gernot Stracke¹, Alexander Glacki¹, Andreas Marent¹, Dieter Bimberg¹, Robert Young², and Manus Hayne² — ¹Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin — ²Department of Physics, Lancaster University, Lancaster, LA1 4YW, United Kingdom

Aiming to use self-organized quantum dots (QDs) as storage units for novel memory devices [1], we studied the charge-carrier dynamics during the processes of charging and discharging QDs by using Deep-Level Transient Spectroscopy (DLTS). Since they are the most promising material systems for increasing the storage time in a quantum dot based memory, we investigated type-II GaSb/GaAs QDs and type-I In_0.25Ga_0.75As QDs on a GaAs interlayer in GaP and extracted localization energies and capture cross sections.

[1] A. Marent et al., The QD-Flash: A quantum dot-based memory device, Semicond. Sci. Technol. 26 (2011) 014026