Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 69: Quantum Dots and Wires: Transport Properties II (mainly Quantum Dots)

HL 69.7: Talk

Wednesday, March 28, 2012, 18:45–19:00, EW 203

Carrier dynamics in MODFETs with embedded quantum dots — •Michael Narodovitch, Tobias Nowozin, Andreas Marent, and Dieter Bimberg — Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin

Due to their confining properties self-organized quantum dots (QDs) could have the potential to be used as storage units inside future memory devices. We have studied an AlGaAs-MODFET structure with an embedded layer of self-organized InAs quantum dots. Since the hole charge inside the QDs is coupled to the two-dimensional hole gas (2DHG) underneath the QD layer, the emission and capture processes between the QDs and the 2DHG can be directly observed in the source/drain current. By using the 2DHG as detector, we have studied the carrier dynamics of the QDs at various temperatures for different initial charge states in the QDs.