Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 69: Quantum Dots and Wires: Transport Properties II (mainly Quantum Dots)
HL 69.8: Vortrag
Mittwoch, 28. März 2012, 19:00–19:15, EW 203
Growth of InN based nanostructures on patterned substrates using MOVPE — •Andreas Winden1,2, Martin Mikulics1,2, Toma Stoica1,2, Martina von der Ahe1,2, Anna Haab1,2, Hilde Hardtdegen1,2, and Detlev Grützmacher1,2 — 1Peter Grünberg Institute -9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA – Fundamentals of Future Information Technology
Due to its small direct band gap indium nitride expands the potential of group III-nitride optoelectronic device applications to the telecommunication wavelength range. Since InN layers exhibit a large lattice mismatch to commonly used substrates, the growth of nanostructures could provide a way to more crystalline perfection and therefore better optical properties. However, the control of their position and size is still challenging. In this contribution we report on the heteroepitaxial selective area growth (SAG) of InN nanostructures on hole-patterned SiO2/GaN/sapphire templates. The influences of growth temperature and time as well as V/III ratio on morphological and optical properties were investigated by scanning electron microscopy, room- and low-temperature (micro-)photoluminescence and Raman spectroscopy. It is found that especially the growth temperature has a major influence on the selectivity. Hence, nucleation on the patterned mask could be avoided and pyramidal shaped InN nanostructures with a base side length down to 40 nm could be achieved in a small growth temperature window around 650 ∘C. Furthermore micro-PL measurements demonstrate a band edge luminescence at room temperature even from individual InN nanostructures.