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09:30 |
HL 6.1 |
Heterostructure growth study for GaP collector integration in SiGe HBT technology — •Oliver Skibitzki, Fariba Hatami, Yuji Yamamoto, Peter Zaumseil, M. Andreas Schubert, Bernd Tillack, W. Ted Masselink, and Thomas Schroeder
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09:45 |
HL 6.2 |
Picosecond hole scattering and cooling dynamics in Ge/SiGe quantum wells. — •Kolja Kolata, Sebastian Imhof, Niko Köster, Giovanni Isella, Daniel Chrastina, John E. Sipe, Angela Thränhardt, and Sangam Chatterjee
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10:00 |
HL 6.3 |
Ultra-fast intersubband-relaxation and the evidence of non-thermal carrier distribution in Ge/SiGe quantum wells — •Alexej Chernikov, Verena Bornwasser, Martin Koch, Niko Köster, Ronja Woscholski, Sangam Chatterjee, Eleonora Gatti, Emanuele Grilli, Mario Guzzi, Danny Chrastina, and Giovanni Isella
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10:15 |
HL 6.4 |
On the strain partitioning phenomenon in Ge clusters on free-standing Si(001) nanopillars — •Grzegorz Kozlowski, Peter Zaumseil, Andreas Schubert, Yuji Yamamoto, Joachim Bauer, Tobias Schulli, Bernd Tillack, and Thomas Schroeder
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10:30 |
HL 6.5 |
Kelvin probe force microscopy imaging on horizontal locally doped silicon nanowires — •Christine Baumgart, Stefan Habicht, Sebastian Feste, Manfred Helm, Siegfried Mantl, and Heidemarie Schmidt
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10:45 |
HL 6.6 |
Raman scattering study of hydrogen-induced defects in ion-implanted Si — •Sebastian Socher, Edward V. Lavrov, and Jörg Weber
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11:00 |
HL 6.7 |
Cobalt-related defects in silicon: A deep level transient spectroscopy study — •Leopold Scheffler, Vladimir Kolkovsky, and Jörg Weber
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11:15 |
HL 6.8 |
Observation of the oxygen precipitation in CZ-silicon by X-ray diffraction — •Christoph Bergmann, Johannes Will, Groeschel Alexander, and Magerl Andreas
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