Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 7: "New" Materials and New Physics in "Old" Materials I

HL 7.2: Talk

Monday, March 26, 2012, 09:45–10:00, EW 015

Deposition of copper oxide by a modified Radio-Frequency Ion Thruster (RIT) as Ion-Beam-Sputter-Source — •Martin Becker, Philipp Hering, Angelika Polity, Davar Feili, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

Radio-Frequency-Ion-Thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and rf power can be applied.

Copper oxide thin films were grown by ion beam sputter deposition using a 4 inch ceramic cuprous oxide target. Different aspects of the thin film growth and properties of the copper oxides were investigated in relation to growth parameters such as substrate temperature, supplied rf power and flux of oxygen.

Results of first investigations on thin films grown by this methodology will be compared to those obtained by "cold" rf-sputtered samples post-annealed in nitrogen atmosphere. Analysis of structural, optical and electrical properties will be shown.