Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 70: Devices II

HL 70.3: Talk

Wednesday, March 28, 2012, 17:45–18:00, EW 015

Marker process for high overlay accuracy e-beam lithography — •Jürgen Moers^1,3, Stefan Trellenkamp^2,3, and Bert Rienks⁴ — ¹Peter Grünberg Institute - 9, Forschungszentrum Jülich, 52425 Jülich, Germany — ²Peter Grünberg Institute - 8-PT, Forschungszentrum Jülich, 52425 Jülich, Germany — ³JARA - Fundamentals of Future Information Technology — ⁴Vistec Lithography B.V., Technical Support Centre, 5684 PS Best, The Netherlands

High level overlay accuracy for e-beam defined patterns in nanoscaled devices is of crucial importance for industrial high performance devices as well as for devices probing new physical effects. Thw quality of overly depends on the quality of the marker itself and the quality of the positioning of the whole marker set. In this work the influence of the positioning algorithm for e-beam defined markers on the overlay accuracy is investigated for two different marker systems: simple square holes in silicon substrates and squares of metal. Both systems were processed with standard methods of semiconductor technology. While in former work the overlay displacement was (18 ± 8) nm, in this work it is shown, that with an optimized marker positioning algorithm overlay displacement of (1.6 ± 2.1) nm can be achieved.