Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 70: Devices II
HL 70.5: Talk
Wednesday, March 28, 2012, 18:15–18:30, EW 015
Spectroscopic characterization of silicon photomultipliers on wafer level — •Thomas Ganka1, Christoph Dietzinger1, Peter Iskra2, Florian Wiest2, and Walter Hansch1 — 1Universität der Bundeswehr München, Fakultät für Elektrotechnik und Informationstechnik — 2KETEK GmbH, München
Silicon photomultipliers (SiPMs) are state-of-the-art sensors, which facilitate measurement of ultra low level light down to single photon resolution. SiPMs are based on an array of avalanche photodiodes operating above the breakdown voltage. In this operation mode single photons can trigger an avalanche and generate a measurable signal. As small technological changes can strongly affect the spectroscopic characteristics of these devices, a setup was built to study the effects already on wafer level. This enables cost-effective and fast development of high-end SiPMs. The developed setup enables fully automatic low-noise measurement of the photon detection efficiency, spectral sensitivity, dark noise, crosstalk and afterpulsing. The results measured on wafer level will be compared with results measured with packaged devices.