Berlin 2012 –
wissenschaftliches Programm
HL 70: Devices II
Mittwoch, 28. März 2012, 17:15–19:00, EW 015
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17:15 |
HL 70.1 |
(Al,In)GaN laser diodes — •Thomas Weig, Katarzyna Holc, Wilfried Pletschen, Klaus Köhler, Joachim Wagner, and Ulrich Schwarz
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17:30 |
HL 70.2 |
Tunnel Junctions on GaAs for cost-effective long-wavelength VCSELs — •Hui Li, Shu-Han Chen, Werner Hofmann, and Dieter Bimberg
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17:45 |
HL 70.3 |
Marker process for high overlay accuracy e-beam lithography — •Jürgen Moers, Stefan Trellenkamp, and Bert Rienks
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18:00 |
HL 70.4 |
Electrical characterization of C60 molecules embedded in a MOS diode — •Daniel Beckmeier and Hermann Baumgärtner
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18:15 |
HL 70.5 |
Spectroscopic characterization of silicon photomultipliers on wafer level — •Thomas Ganka, Christoph Dietzinger, Peter Iskra, Florian Wiest, and Walter Hansch
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18:30 |
HL 70.6 |
Embedding submicrometer sized GaN stripes with semipolar quantum wells for application in light emitting diodes — •Robert A. R. Leute, Dominik Heinz, Frank Lipski, Tobias Meisch, Kamran Forghani, Junjun Wang, Klaus Thonke, and Ferdinand Scholz
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18:45 |
HL 70.7 |
Quenching Resistors for Silicon Photomultipliers — •Christoph Dietzinger, Thomas Ganka, Peter Iskra, Florian Wiest, and Walter Hansch
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