Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces

HL 71.19: Poster

Wednesday, March 28, 2012, 16:00–19:00, Poster D

Resist-free patterning and transport measurements on graphene layers — •Benedikt Sommer, Arkadius Ganczarczyk, Martin Geller, and Axel Lorke — Faculty of Physics and CeNIDE, Universität Duisburg-Essen

Graphene is expected to have an exceptional high charge carrier mobility even at room temperature. However, high mobility in patterned graphene layers may be hampered by the patterning process, as many processes involve a lithographic step, which requires that the graphene is covered with an organic resist. This step may compromise the transport properties of graphene permanently, as the resist can not be removed completely. A lot of effort is being invested into finding ways to pattern graphene in a mask- and resist-free manner.

In this work, we show resist-free patterning of graphene sheets using different techniques within a focused ion beam (FIB) system. Care has been taken that the active area of the graphene has not been exposed to either ion or electron beams. Furthermore, the graphene has not been exposed to organic materials or solvents after the exfoliation process. The patterned graphene layers are characterized in transport measurements from low temperatures (4 K) up to room temperature, especially to extract the mobility of the charge carriers.