Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces

HL 71.21: Poster

Mittwoch, 28. März 2012, 16:00–19:00, Poster D

MBE-grown HgTe as a 2D and 3D topological insulator — •Philipp Leubner, Christopher Ames, Maximilian Kessel, Matthias Mühlbauer, Luis Maier, Christoph Brüne, Hartmut Buhmann, and Laurens Molenkamp — Physikalisches Institut (EP III), Universität Würzburg, D-97074 Würzburg, Germany

Since the first theoretical prediction of the quantum spin hall effect in 2005 [1], topological insulators (Tis) are receiving ongoing attention due to their unique band structure. In 2007 the first experimental evidence of a 2D TI was found in an HgTe/HgCdTe heterostructure [2].

We have grown HgTe layers of different thicknesses on CdTe substrates via molecular beam epitaxy in order to investigate the transition between 2D and 3D TIs. The effect of strain and relaxation due to lattice mismatch is crucial for the band properties of HgTe and therefore analyzed via HRXRD.

Additionally, we present transport measurements on the grown layers showing indications of 2D or 3D TI behavior depending on layer thickness.

[1] Kane et. al., Phys. Rev. Lett. 95 146802 (2005) [2] König et. al., Science 318, 766 (2007)