Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 71: Poster Session: Graphene / Topological Insulators / Interfaces and Surfaces
HL 71.25: Poster
Mittwoch, 28. März 2012, 16:00–19:00, Poster D
FTIR-Spectroscopy of MOCVD-Prepared Ge(100) and P-rich GaP(100) — •Claas Löbbel1, Anja Dobrich1, Johannes Luczak1, Sebastian Brückner1,2, Henning Döscher1,2, Peter Kleinschmidt1,3, and Thomas Hannappel1,2,3 — 1Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — 2TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, D-99099 Erfurt
We have investigated hydrogen bonding in MOVPE-prepared Ge(100) surfaces as well as GaP/Si(100) surfaces using Fourier-transform infrared (FTIR) spectroscopy in an attenuated total reflection (ATR) configuration enabling sensitive measurements of the germanium-hydrogen bonds as well as phosphorus-hydrogen bonds at the surface. MOVPE preparation and in-situ reflectance anisotropy spectroscopy (RAS) measurements were correlated with UHV-based surfaces science techniques such as FTIR, scanning tunnelling microscopy (STM), and low-energy electron diffraction (LEED) by employing a contamination-free MOVPE to UHV transfer system. FTIR measurements showed Ge-H monohydrides as well as P-H semihydrides surfaces, agreeing with results from LEED. Polarization dependend Ge(100) FTIR measurements revealed, matching STM results, a (2x1)/(1x2) reconstructed surface and even allowed a quantization of the domain ratio.