Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 72: Poster Session: Si-based Photovoltaics / Inorganic Photovoltaics / Structure and Transport in Organic Photovoltaics / Organic Semiconductors
HL 72.13: Poster
Wednesday, March 28, 2012, 16:00–19:00, Poster D
Numerical Simulation of Chalcogenide Solar Cells — •Olga Bakaeva1, Felice Friedrich1,2, Rainer Leihkauf1, Thomas Unold3, and Christian Boit1 — 1Berlin University of Technology, Sekr. E2, Einsteinufer 19, D-10587 Berlin — 2PVcomB, Schwarzschildstr. 3, D-12489 Berlin — 3Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin
Numerical simulation is an essential method for fundamental understanding of solar cell physics and the improvement of the functionality of devices. Grain boundary effects and materials grading, that play an important role in chalcogenide solar cells, make it necessary to develop a model for 2D simulations. In this study, our aim was to compare the well-known one-dimensional simulation tool SCAPS1D with the commercial simulation program Sentaurus TCAD that allows for multidimensional simulation. A model with the same parameter set for Cu(In,Ga)Se2 solar cell was set up in TCAD and SCAPS1D. The effects of band alignment and generation rate on the dark and illuminated I-V characteristics were analyzed. First results of the effects of a Ga-grading in the solar cells will be discussed.