Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 72: Poster Session: Si-based Photovoltaics / Inorganic Photovoltaics / Structure and Transport in Organic Photovoltaics / Organic Semiconductors

HL 72.27: Poster

Wednesday, March 28, 2012, 16:00–19:00, Poster D

Bottom-gated test bed for organic field-effect transistors with epitaxial graphene electrodes — •Emmanuel Bayaya, Daniel Waldmann, Johannes Schöck, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7 / Bau A3, 91058 Erlangen

We fabricate organic field-effect transistors with graphene source- and drain electrodes, using epitaxial graphene on silicon carbide (0001).A bottom-gate is provided by implantation prior to graphene growth [1]. This setup provides an ultra flat test bed for organic semiconductors, or other materials. We demonstrate gate operation for Poly(3-hexylthiophene), and critically discuss the role of interface states being created during the fabrication.

[1] D. Waldmann, J. Jobst, F. Speck, T. Seyller. M. Krieger, H.B. Weber, Nature Materials 10, 357-360 (2011).