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HL: Fachverband Halbleiterphysik

HL 72: Poster Session: Si-based Photovoltaics / Inorganic Photovoltaics / Structure and Transport in Organic Photovoltaics / Organic Semiconductors

HL 72.9: Poster

Mittwoch, 28. März 2012, 16:00–19:00, Poster D

Optoelectronic properties of thin film Cu₂S — •Hendrik Sträter¹, Rudolf Brüggemann¹, Gottfried H Bauer¹, Sebastian Siol², Andreas Klein², and Wolfram Jaegermann² — ¹Institut für Physik, Carl von Ossietzky Universität, D-26111 Oldenburg — ²Material- und Geowissenschaften, FG Oberflächenforschung, TU Darmstadt, D-64287 Darmstadt

Cuprous sulfide (Cu₂S) is a non-toxic and low-cost p-type semiconductor and therefore considered as an alternative for CdTe or CuIn_xGa_1-x(S,Se)₂ thin film solar cells. We investigated Cu₂S absorber layers prepared by physical vapor deposition (PVD) with varying pre- and post-treatment processes of the substrate and the Cu₂S absorber. Calibrated photoluminescence experiments with lateral µm and mm resolution were performed to obtain the splitting of the quasi-Fermi levels (QFL) µ, the absorption coefficient α and the optical band gap E_G. Additionally we have determined the local variation of the QFL-splitting across the absorber. The best sample has been prepared with both pre- and post-treatment by annealing and has a QFL-splitting of µ ≈ 720 meV. All samples show an optical band gap of E_G ≈ 1.3 eV.