Berlin 2012 –
scientific programme
HL 73: GaN: Preparation and Characterization IV
Thursday, March 29, 2012, 09:30–11:00, ER 270
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09:30 |
HL 73.1 |
AlInN/GaN-heterostructures for sensing applications — •Malte Fandrich, Timo Aschenbrenner, Stephan Figge, Thorsten Mehrtens, Andreas Rosenauer, and Detlef Hommel
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09:45 |
HL 73.2 |
Development of AlxGa1−xN MSM photodetectors — •Moritz Brendel, Andrea Knigge, Sven Einfeldt, Frank Brunner, Arne Knauer, and Markus Weyers
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10:00 |
HL 73.3 |
Electrical properties of p-type AlGaN/GaN layers on Si substrates — Antje Rohrbeck, •Hartmut Witte, Phannee Sangkaew, Peter Veit, Bernd Garke, Armin Dadgar, Juergen Christen, Ruediger Goldhahn, and Alois Krost
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10:15 |
HL 73.4 |
High quality n-GaN with carrier concentrations above 1020 cm− 3 using Germanium doping — •Stephanie Fritze, Antje Rohrbeck, Hartmut Witte, Armin Dadgar, and Alois Krost
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10:30 |
HL 73.5 |
Reliable defect energetics in GaN:Mg — •Björn Lange, Christoph Freysoldt, Jörg Neugebauer, Qimin Yan, John L. Lyons, Anderson Janotti, and Chris G. Van de Walle
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10:45 |
HL 73.6 |
Investigating Highly Doped Marker Layers in GaN on Sapphire using Scanning Microwave Microscopy — •Matthias A. Fenner and Rachel A. Oliver
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