Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 76: Heterostructures

HL 76.2: Vortrag

Donnerstag, 29. März 2012, 09:45–10:00, EW 202

High quality MgZnO/ZnO Quantum wells on polar and non-polar Substrates — •Jan Zippel, Gabriele Benndorf, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, Germany

ZnO has promising properties for the application in blue and ultraviolet light-emitting diodes. An increase in the internal quantum efficiency can be achieved by the growth of quantum well heterostructures. The quality of the interfaces and the control of the growth mode is necessary to achieve efficient heterostructures. Here, we present the growth of MgZnO/ZnO quantum wells heteroepitaxially as well as homoepitaxially by pulsed-laser deposition (PLD). Adopting the strategy of fairly low growth temperatures proposed in [1], we grow ZnO quantum wells on commercially available a-sapphire substrates in a layer by layer growth mode showing reflection high energy electron diffraction (RHEED) oscillations over the whole quantum well thickness. In the case of homoepitaxially grown MgZnO/ZnO quantum wells, we focus on non-polar ZnO substrates to avoid the quantum confined Stark effect observable in polar MgZnO/ZnO structures. Quantum confinement in MgZnO/ZnO heterostructures grown on non-polar m-plane ZnO substrates as well as on non polar a-plane ZnO substrates is presented. Additionally, ZnO thin films grown by an interval PLD approach on c-plane ZnO substrates showing smooth surfaces and RHEED oscillations over the whole layer are presented. [1] S. Sadofev et al., Appl. Phys. Lett 87, 091903 (2005).