Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 83: Focus Session: III-Nitride Heterostructures for Optoelectronics - Polarization Reduction, Green Gap and High In-containing Alloys

HL 83.1: Invited Talk

Thursday, March 29, 2012, 15:00–15:30, EW 201

Compositional instability in InGaN and InAlN thick films with high indium content — •Fernando Ponce — Department of Physics, Arizona State University, Tempe, AZ 85287, USA

Control on the indium content in InGaN and AlGaN alloys is important to achieve high efficiency light emitting devices operating in the visible regime, or to achieve ultraviolet light emitting structures that are lattice matched to GaN. For existing growth methods, there seems to exist limits at ~ 20% in the indium content for both the InGaN and AlGaN alloys. This talk will cover the microstructural and optical manifestations of compositions instability in thick epilayers.