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HL: Fachverband Halbleiterphysik

HL 85: Organic Semiconductors: Transistors and OLEDS

HL 85.1: Vortrag

Donnerstag, 29. März 2012, 15:00–15:15, EW 203

New material combinations for ion gel gated organic thin film transistors — •Johannes Schöck¹, Daniel C. Frisbie², and Heiko B. Weber¹ — ¹Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Germany — ²Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, USA

Ion gels can efficiently gate thin film transistors made from small molecules. Sharing the same benefits as ionic liquids, they are easier to handle and promise better reproducibility. n- and p-type transistors were fabricated from PCBM and custom-made pentacene dimer derivatives. PVdF/[BMP+][FAP-] and PVdF/[EMIm+][TFSi-] ion gels were used as top gates, using P3HT as a standard semiconductor for comparison.