Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 85: Organic Semiconductors: Transistors and OLEDS
HL 85.4: Talk
Thursday, March 29, 2012, 15:45–16:00, EW 203
Structural and Electrical Characterization of 3D Gate Organic Field Effect Transistor — •S S Phani Kanth Arekapudi1, Daniel Lehmann1, Danny Reuter2, and Dietrich R T Zahn1 — 1Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany — 22Center for Microtechnologies (ZFM), Chemnitz University of Technology, D-09126 Chemnitz, Germany
Recent implementation of 3D gate transistors proven to have high performance, power efficiency, and improved switching behavior with less leakage current, we present an investigation of structural and electrical properties of advanced 3D gate organic field effect transistors. In this work we prepared the structures on silicon substrates. To pattern the gate, source, and drain with desired mask dimensions, stepper lithography is employed. Using deep reactive ion etching the gate trenches with channel lengths (L) ranging between L = (500 - 1500) nm, channel widths (W) ranging between W = (150 - 700) nm, and channel depth (d) 500 nm are formed. As a dielectric layer 100 nm thick SiO2 is thermally deposited on prepatterned silicon. As an active layer pentacene (<400 nm thick) is deposited on to the SiO2 layer using organic molecular beam deposition under high vacuum (HV) condition. Gold deposition for source and drain electrodes is performed using thermal evaporation under HV conditions. The 3D gate confines the organic material inside the trench, which provides high durability with less leakage current and improved mobility for the device. Further details concerning the structure preparation and electrical characterization results will be presented and discussed.