Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 86: Semiconductor Lasers

HL 86.10: Vortrag

Donnerstag, 29. März 2012, 17:30–17:45, EW 015

Green II-VI-based electron beam pumped vertical-cavity surface-emitting laser — •Thorsten Klein¹, Sebastian Klembt¹, Vladimir I. Kozlovsky², Michael D. Tiberi³, and Carsten Kruse¹ — ¹Institute of Solid State Physics, University of Bremen, Germany — ²P.N. Lebedev Physical Institute, Moscow, Russia — ³Principia Lightworks, Inc., Woodland Hills, USA

Laser light sources for projection applications have distinct advantages over the commonly used light sources. The color gamut of an RGB laser light based display is closer to the range of the human visual system, and the operating lifetime is significantly extended. Optical coupling is simple due to the small divergence angle of vertical-cavity surface-emitting laser (VCSEL). Color filters are not needed, leading to an improvement in power efficiency. Moreover, UV and IR emission is eliminated. An electron beam pumped VCSEL (eVCSEL) based on II-VI semiconductors has been developed for emission in the green spectral region. The structure was grown using molecular beam epitaxy on (001)-GaAs substrates misoriented 10^∘ towards the (111)A crystal plane. The 10.5 fold bottom DBR consists of a MgS-ZnCdSe-superlattice as low index material and ZnSSe as high index material. The cavity contains 20 ZnCdSSe-QWs in ZnSSe barriers, the 4 fold dielectric top DBR consists of SiO₂/Ta₂O₅. Structural characterization was carried out by HRXRD, SEM and TEM. Luminescence properties were investigated by CL and PL. Room temperature lasing was achieved at 522 nm. The output power is about 2.5 - 3 W using 45 keV of acceleration voltage and 1.5 mA of current for the electron beam.